n-channel enhancement mode vertical dmos fet issue 2 C march 94 features * 200 volt v ds *r ds(on) =10 w * low threshold applications * telephone handsets absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 200 v continuous drain current at t amb =25c i d 180 ma pulsed drain current i dm 2a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 200 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.5 1.5 v id=1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =200 v, v gs =0 v ds =160 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 500 ma v ds =25 v, v gs =5v static drain-source on-state resistance (1) r ds(on) 10 10 w w v gs =5v,i d =250ma v gs =3v, i d =125ma forward transconductance (1)(2) g fs 200 ms v ds =25v,i d =250ma input capacitance (2) c iss 85 pf common source output capacitance (2) c oss 20 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 7pf turn-on delay time (2)(3) t d(on) 8ns v dd ? 25v, i d =250ma rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 20 ns fall time (2)(3) t f 12 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator e-line to92 compatible ZVNL120A 3-401 d g s typical characteristics output characteristics v ds - drain source voltage (volts) i d( o n ) dr a i n c u r r en t (amp s ) saturation characteristics i d( o n ) drain current (amps) v ds - drain source voltage (volts) 0 5 10 15 20 25 30 35 40 45 50 4v 3v v gs = 1.6 1.2 0.4 0 0.8 1.4 1.0 0.6 0.2 10v 4v 3v v gs = 0.6 0 0.2 0.4 0.8 02 46810 1.0 8v 5v 2v 2v 8v 6v v gs- gate source voltage (volts) 300 0 100 200 400 12345678910 500 v ds= 25v transconductance v gate-source voltage g fs -t ransconductance (ms) transconductance v drain current i d - drain current (amps ) g fs - t r an sc o n ducta n c e ( ms ) 0 0.2 0.4 0.6 0.8 1.0 0 100 200 400 300 500 1.2 1.4 1.6 1.8 2.0 v ds= 25v 10v 6v transfer characteristics i d( o n ) dr a i n c u r r e nt ( amps ) v gs- gate source voltage (volts) 012345678910 v ds= 40v 0.8 0 1.6 1.2 0.6 1.4 1.0 0.4 0.2 20v 10v v ds -drain source voltage (volts) capacitance v drain-source voltage c- capa c ita n c e ( p f ) c oss c iss c rss 0 10 20 30 40 50 60 40 20 80 100 ZVNL120A 3-402
n-channel enhancement mode vertical dmos fet issue 2 C march 94 features * 200 volt v ds *r ds(on) =10 w * low threshold applications * telephone handsets absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 200 v continuous drain current at t amb =25c i d 180 ma pulsed drain current i dm 2a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 200 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.5 1.5 v id=1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =200 v, v gs =0 v ds =160 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 500 ma v ds =25 v, v gs =5v static drain-source on-state resistance (1) r ds(on) 10 10 w w v gs =5v,i d =250ma v gs =3v, i d =125ma forward transconductance (1)(2) g fs 200 ms v ds =25v,i d =250ma input capacitance (2) c iss 85 pf common source output capacitance (2) c oss 20 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 7pf turn-on delay time (2)(3) t d(on) 8ns v dd ? 25v, i d =250ma rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 20 ns fall time (2)(3) t f 12 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator e-line to92 compatible ZVNL120A 3-401 d g s typical characteristics output characteristics v ds - drain source voltage (volts) i d( o n ) dr a i n c u r r en t (amp s ) saturation characteristics i d( o n ) drain current (amps) v ds - drain source voltage (volts) 0 5 10 15 20 25 30 35 40 45 50 4v 3v v gs = 1.6 1.2 0.4 0 0.8 1.4 1.0 0.6 0.2 10v 4v 3v v gs = 0.6 0 0.2 0.4 0.8 02 46810 1.0 8v 5v 2v 2v 8v 6v v gs- gate source voltage (volts) 300 0 100 200 400 12345678910 500 v ds= 25v transconductance v gate-source voltage g fs -t ransconductance (ms) transconductance v drain current i d - drain current (amps ) g fs - t r an sc o n ducta n c e ( ms ) 0 0.2 0.4 0.6 0.8 1.0 0 100 200 400 300 500 1.2 1.4 1.6 1.8 2.0 v ds= 25v 10v 6v transfer characteristics i d( o n ) dr a i n c u r r e nt ( amps ) v gs- gate source voltage (volts) 012345678910 v ds= 40v 0.8 0 1.6 1.2 0.6 1.4 1.0 0.4 0.2 20v 10v v ds -drain source voltage (volts) capacitance v drain-source voltage c- capa c ita n c e ( p f ) c oss c iss c rss 0 10 20 30 40 50 60 40 20 80 100 ZVNL120A 3-402
typical characteristics normalised r ds(on) and v gs(th) vs temperature no r mal ise d r ds(on) and v g s(t h) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u r c e r e s i s ta n c e r ds( o n ) gate t h res h o l d v o l tag e v gs ( th ) t j -junction temperature (c) 0.4 -80 -60 q-charge (nc) v g s -gate source voltage (v olts) gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 v ds = 50v i d= 700ma 100v 150v 0.4 0.8 1.2 1.6 2.0 2.4 i d= 125ma v gs= 3v i d= 1ma v gs= v ds on-resistance v drain current i d- drain current (ma) r ds(on) -drain source on resistance ( w ) 10 100 1000 3v 4v v gs =2v 100 10 10v 5v i d= 250ma v gs= 5v on-resistance vs gate-source voltage v gs -gate source voltage (volts) r ds(on) -drain source resistance ( w ) 11020 i d= 1a 0.5a 0.1a 1 10 100 1 ZVNL120A 3-403
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